PMBFJ110,215

PMBFJ110,215 datasheet

Маркировка

PMBFJ110,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMBFJ110,215 Current - Drain (idss) @ Vds (vgs=0): 10mA @ 15V Drain To Source Voltage (vdss): 25V Fet Type: N-Channel ID_COMPONENTS: 1950337 Input Capacitance (ciss) @ Vds: 30pF @ 10V (VGS) Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Power - Max: 250mW Resistance - Rds(on): 18 Ohm Voltage - Breakdown (v(br)gss): 25V Voltage - Cutoff (vgs Off) @ Id: 4V @ 1?µA Product Category: JFET RoHS: yes Transistor Polarity: N-Channel Drain Current (Idss at Vgs=0): 10 mA Drain Source Voltage VDS: +/- 25 V Gate-Source Breakdown Voltage: - 25 V Configuration: Single Gate-Source Cutoff Voltage: - 4 V Input Capacitance: 50 pF Maximum Drain Gate Voltage: - 25 V Maximum Operating Temperature: + 150 C Power Dissipation: 250 mW Resistance Drain-Source RDS (on): 18 Ohms Series: PMBFJ110 Factory Pack Quantity: 3000 Part # Aliases: PMBFJ110 T/R Other Names: 568-2080-2, 934003900215, PMBFJ110 T/R
Количество страниц

8 шт.
Форматы файла

HTML, PDF
(Для просмотра требуется Adobe Acrobat Reader)